Sheoran, Dinesh and Shokeen, Vijay and Sangwan, Pardeep and Lata, Suman (2023) Tunnelling FETs, the Non-conventional Transistors: Basics. In: Proceedings of the 3rd International Conference on ICT for Digital, Smart, and Sustainable Development, ICIDSSD 2022, 24-25 March 2022, New Delhi, India.
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Abstract
The tunnel field-effect transistor (TFET) exploits the band to band tunneling (BTBT) phenomenon for carrier injection and this helps to lower the subthreshold swing <60mV/decade due to the absence of thermal (kT/q) dependence. Tunnel Field Effect Transistor has been evolved by T. Baba in 1992, and p
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Date Deposited: | 04 Mar 2026 16:13 |
| Last Modified: | 17 Apr 2026 03:19 |
| URI: | http://eprints.eai.eu/id/eprint/42819 |
