New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration

Dherbecourt, Pascal and Oualkadi, Ahmed El and Joubert, Eric and Bouchour, Al Mehdi and Jouha, Wadia and Masmoudi, Mohamed and Latry, Olivier (2019) New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration. In: Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco.

[thumbnail of 32104.pdf] PDF
32104.pdf

Download (424kB)

Abstract

This paper proposes a methodology to study the reliability and failure analysis of new technologies of power transistors. The use of wide gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) is now a good alternative to meet the integration requirements of energy conversion systems.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Date Deposited: 04 Mar 2026 12:07
Last Modified: 17 Apr 2026 14:29
URI: http://eprints.eai.eu/id/eprint/22905

Actions (login required)

View Item
View Item