BOUCHOUR, Al Mehdi and Dherbécourt, Pascal and Latry, Olivier and Oualkadi, Ahmed El (2019) Temperature Effects of GaN HEMTs on the Design of Power Converters. In: Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco.
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Abstract
This paper proposes an experimental study of temperature effects on Gallium
Nitride (GaN) High Electron Mobility Transistors (HEMTs). The output and transfer
characteristics are monitored at temperatures ranging from 5°C to 105°C. The temperature
dependency on static parameters of GaN HEMT is examin
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Date Deposited: | 04 Mar 2026 12:07 |
| Last Modified: | 17 Apr 2026 14:30 |
| URI: | http://eprints.eai.eu/id/eprint/22896 |
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